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HY3215W MOSFET IR2118 IC 47N60C3 MOSFET FEATURES

SKU: 40225228959

4.0
USD150.00 USD200.00

Pay in 4 interest-free payments of $37.50 Learn more

Shipping Estimate
USA
  • USA
  • CAN

Ships within 48 hours · Estimated delivery Aug 8 - Aug 13

Description

47N60C3 MOSFET FEATURES

making it reliable in workshop and field environments alike

✦ Portable and Lightweight Design: At just 47g

and low-power applications

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HY3215W MOSFET IR2118 IC 47N60C3 MOSFET FEATURESSpecifications: Type Designator: HY3215W Type of Transistor: MOSFET Type of Control Channel: N Channel Maximum Power Dissipation (Pd): 349 W Maximum Drain Source Voltage Vds : 150 V Maximum Gate Source Voltage Vgs : 25 V Maximum Gate Threshold Voltage Vgs(th) : 5 V Maximum Drain Current Id : 130 A Maximum Junction Temperature (Tj): 175 C Total Gate Charge (Qg): 135 nC Rise Time (tr): 40 nS Drain Source Capacitance (Cd): 480 pF Maximum Drain Source On

Exchange/Return Notes
  • We offer a 30-day return/exchange service after receiving.
  • Final sale items are not eligible for returns or exchanges.
  • To process your return/exchange, please contact us at [email protected]
  • Please click here for more details>>> Return & Exchange Policy

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